650v igbt

Brand Name:Lingxun

Place of Origin:China

Model Number:LGT20N65B

650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high voltage applications. It features an IGBT device type that allows for excellent current sharing in parallel operation, resulting in consistent performance. With a switching frequency of 20KHz to 60KHz, the Inverter IGBT...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FS150R07N3E4B11

Automotive IGBT Modules FS150R07N3E4B11 6-Pack IGBT Silicon Modules 150A 650V IGBT Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

Brand Name:Infineon Technologies

Model Number:FF400R07KE4

Place of Origin:HUNGARY

FF400R07KE4 IGBT Modules IGBT Module 400A 650V 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled Diode VCES = 650V IC nom = 400A / ICRM = 800A Typische ...

Brand Name:WeEn Semiconductors

Model Number:WG50N65DHWQ

...IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT...

Brand Name:Krunter

Model Number:KVP200H12E4-3TB

KVP200H12E4-3TB Compact Package Low Switching Loss Assembled in PCB Integrated NTC temperature sensor Isolated Baseplate by Al2O3 substrate Specification Parameters TYPE T1, T4 T2, T3 Circuit Package Technology VCES Volts IC Amps VCE(SAT) Volts Ptot Watts ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Brand Name:Original Manufacturer

Model Number:STGWA60H65DFB

Place of Origin:Original

... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 240A Vce(on)

Brand Name:SEMICONDUCTOR

Model Number:A70QS175-4

Place of Origin:Malaysia

A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications...

Brand Name:Infineon Technologies

Model Number:IKW50N65H5FKSA1

Place of Origin:original

... Collector Emitter Voltage: 650V Collector Emitter Saturation Voltage: 2.4V Operating Temperature: -40°C to 150°C Package: TO-247AC Why buy from us >>> Fast / Safely / Conveniently • ...

Brand Name:ONSEMI

Model Number:FAM65V05DF1

Place of Origin:Netherlands

FAM65V05DF1 ONSEMI IPM IGBT 650V 50A Automotive 27-Pin APM-CAA Tube Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive Yes PPAP Unknown Type IGBT Configuration Hex Number of Phases Three Protection Type Short ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Voltage IGBT with Faster Switching Speed and High Power *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Model Number:FS800R07A2E3

Place of Origin:Guangdong, China

Brand Name:China

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Brand Name:MAGNACHIP

Model Number:MBQ60T65PES

Place of Origin:KOREA

Brand Name:ST

Model Number:STW34NM60ND

Place of Origin:CHINA

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Features Order codes VDSS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND STW34NM60ND 650V 0.110 Ω 29A ■ The world’s best RDS...