4h n type epi wafer

Brand Name:ZMSH

Model Number:SIC

Place of Origin:China

...4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 12inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 12-inchH-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer, with a thickness of 500±25 µm, was fabricated using state-of-the-art techniques and is doped with n-type...

Brand Name:PAM-XIAMEN

Place of Origin:China

... semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and

Brand Name:ZMSH

Model Number:4H 6inch SiC Epitaxial Wafer

Place of Origin:CHINA

SiC Epi Wafer Overview​ ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal ...

Country/Region:china

...Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers...