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IGBT Module Fuji Electric 2MBI150VA-060-50 for Motor Drives Servo Amplifiers and Welding Applications

Categories	Single IGBTs
Pd - Power Dissipation:	650W
Collector-Emitter Breakdown Voltage (Vces):	600V
Reverse Transfer Capacitance (Cres):	9.7nF
Input Capacitance(Cies):	9.7nF
IGBT Type:	IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):	6.2V@150mA
Reverse Recovery Time(trr):	200ns
Description:	650W 600V IGBT Module Screw Terminals Single IGBTs RoHS
Mfr. Part #:	2MBI150VA-060-50
Model Number:	2MBI150VA-060-50
Package:	Screw Terminals

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IGBT Module Fuji Electric 2MBI150VA-060-50 for Motor Drives Servo Amplifiers and Welding Applications

Product Overview

The Fuji Electric 2MBI150VA-060-50 is a high-speed switching IGBT module designed for voltage drive applications. It features a low inductance module structure and is suitable for various industrial applications including motor drives, servo amplifiers, uninterruptible power supplies, and welding machines.

Product Attributes

Brand: Fuji Electric
Model: 2MBI150VA-060-50
Product Type: IGBT Module (V series)
Origin: Japan (implied by website and language)
Certifications: Not specified in the provided text.
Material: Not specified in the provided text.
Color: Not specified in the provided text.

Technical Specifications

Items	Symbols	Conditions	Units	min.	typ.	max.
Absolute Maximum Ratings
Collector-Emitter voltage	VCES		V			600
Gate-Emitter voltage	VGES		V			20
Collector current	IC	TC=100C	A			150
IC pulse		1ms	A			300
-IC			A			150
-IC pulse		1ms	A			300
Collector power dissipation	PC	1 device	W			650
Junction temperature	Tj		C			175
Operating junction temperature (under switching conditions)	Tjop		C		150
Case temperature	TC		C			125
Storage temperature	Tstg		C	-40		125
Isolation voltage between terminal and copper base (*1)	Viso	AC : 1min.	VAC		2500
Screw torque Mounting (*2)			N m			5.0
Screw torque Terminals (*3)			N m			5.0
Electrical Characteristics
Zero gate voltage collector current	ICES	VGE = 0V, VCE = 600V	mA			1.0
Gate-Emitter leakage current	IGES	VCE = 0V, VGE = 20V	nA			200
Gate-Emitter threshold voltage	VGE (th)	VCE = 20V, IC = 150mA	V	6.2	6.7	7.2
Collector-Emitter saturation voltage (terminal)	VCE (sat)	VGE = 15V, IC = 150A, Tj=25C	V		1.75	2.20
Collector-Emitter saturation voltage (terminal)	VCE (sat)	VGE = 15V, IC = 150A, Tj=125C	V		2.05
Collector-Emitter saturation voltage (terminal)	VCE (sat)	VGE = 15V, IC = 150A, Tj=150C	V			2.25
Collector-Emitter saturation voltage (chip)	VCE (sat)	VGE = 15V, IC = 150A, Tj=25C	V		1.60	2.05
Collector-Emitter saturation voltage (chip)	VCE (sat)	VGE = 15V, IC = 150A, Tj=125C	V		1.90
Collector-Emitter saturation voltage (chip)	VCE (sat)	VGE = 15V, IC = 150A, Tj=150C	V			2.00
Internal gate resistance	RG (int)					6
Input capacitance	Cies	VCE = 10V, VGE = 0V, f = 1MHz	nF		9.7
Turn-on time	ton	VCC = 300V, LS = 30nH, IC = 150A, VGE = 15V, RG = 9, Tj = 150C	nsec		650
tr			nsec		300
tr (i)			nsec		100
Turn-off time	toff		nsec		600
tf			nsec		40
Forward on voltage (terminal)	VF	VGE = 0V, IF = 150A, Tj=25C	V		1.70	2.15
Forward on voltage (terminal)	VF	VGE = 0V, IF = 150A, Tj=125C	V		1.60
Forward on voltage (terminal)	VF	VGE = 0V, IF = 150A, Tj=150C	V			1.57
Forward on voltage (chip)	VF	VGE = 0V, IF = 150A, Tj=25C	V		1.60	2.05
Forward on voltage (chip)	VF	VGE = 0V, IF = 150A, Tj=125C	V		1.50
Forward on voltage (chip)	VF	VGE = 0V, IF = 150A, Tj=150C	V			1.47
Reverse recovery time	trr	IF = 150A	nsec		200
Thermal Resistance Characteristics
Thermal resistance (1device) IGBT	Rth(j-c)		C/W			0.31
Thermal resistance (1device) FWD	Rth(j-c)		C/W			0.60
Contact thermal resistance (1device) (*4)	Rth(c-f)	with Thermal Compound	C/W		0.050

2410121955_Fuji-Electric-2MBI150VA-060-50_C111289.pdf

IGBT Module Fuji Electric 2MBI150VA-060-50 for Motor Drives Servo Amplifiers and Welding Applications

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