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40V 3A 1N5822 Schottky Diode / Schottky Rectifier Diode For Low Voltage

Categories Silicon Rectifier Diode
Brand Name: ANYO
Model Number: 1N5822
Place of Origin: CHINA
MOQ: 100000pcs
Price: Negotiation
Supply Ability: 1000000PCS
Packaging Details: 50000PCS/CARTON, 6.8KG, 43*27*31cm
Delivery Time: 8-10 work days
Payment Terms: L/C, T/T
Other name: Schottky rectifier diode
Polarity: Cathode band
Mounting Position: Any
Weight: 1.10grams (approx)
Average forward current: 3A
Non-repetitive peak current: 80A
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40V 3A 1N5822 Schottky Diode / Schottky Rectifier Diode For Low Voltage

1N5822 40V 3A schottky rectifier diode for use in low voltage


Description:


A Schottky diode, similar to a regular diode, limits the flow of electricity to one direction, much like the action of a one-way water valve. The Schottky diode, however, has an enhanced electrical response time because of a much lower voltage dissipation. Common malfunctions of a Schottky diode include electrical shorting and overheating.


The semiconductor composition of a Schottky diode is slightly different from a normal diode, and this results in a much smaller forward voltage drop, which is usually between 0.15V and 0.45V. They’ll still have a very large breakdown voltage though.

Schottky diodes are especially useful in limiting losses, when every last bit of voltage must be spared. They’re unique enough to get a circuit symbol of their own, with a couple bends on the end of the cathode-line.


Features:


Extremely low VF
Epitaxial construction
Low power loss, high efficiency
Low stored charge, majority carrier construction
Plastic material has UL flammability classification 94V-0


Application:


Schottky diodes are used as general-purpose rectifiers.
Schottky diodes are used in radio frequency (RF) applications.
Schottky diodes are widely used in power supplies.
Schottky diodes are used to detect signals.
Schottky diodes are used in logic circuits.


Maximum Ratings & Thermal Characteristics:


Rating at 25ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.

For Capacitive load derate current by 20%.


ParameterSymbol1N5822Unit
Max.repetitive peak reverse voltageVRRM40V
Max. RMS bridge input voltageVRMS28V
Max. DC blocking voltageVDC40V
Max. average forward rectified output current at TA=75℃IF(AV)3.0A
Peak forward surge current single sine-wave superimposed on rated loadIFSM80A
Typical thermal resistance per elementReJA30℃/W
Typical junction capacitance per elementCj250pF
Operating junction and storage temperature range

Tj

TSTG

-55 to +125

Electrical Characteristics:


Rating at 25ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.

For Capacitive load derate by 20 %.


ParameterSymbol1N5822Unit
Max. instantaneous forward voltage drop per leg at 1.0AVF0.525V

Max. DC reverse current at rated TA=25℃

DC blocking voltage per element TA=25℃

IR

2.0

20.0

mA

Dimension:

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