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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS

Categories Electronic IC Chips
Model Number: MRF9030
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7800pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: RF Mosfet TO-270-2 GULL
Drain–Source Voltage: 68 Vdc
Gate–Source Voltage: –0.5, +15 Vdc
Storage Temperature Range: –65 to +200 °C
Operating Junction Temperature: 200 °C
Input Capacitance: 49.5 pF
Output Capacitance: 26.5 pF
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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS


The RF Sub–Micron MOSFET Line

RF POWER FIELD EFFECT TRANSISTORS

N–Channel Enhancement–Mode Lateral MOSFETs


945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs


Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

• Typical Two–Tone Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 19 dB

Efficiency — 41.5%

IMD — –32.5 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.


MAXIMUM RATINGS

RatingSymbolValueUnit
Drain–Source VoltageVDSS68Vdc
Gate–Source VoltageVGS–0.5, +15Vdc

Total Device Dissipation @ TC = 25°C MRF9030R1

Derate above 25°C

PD

92

0.53

Watts

W/°C

Total Device Dissipation @ TC = 25°C MRF9030SR1

Derate above 25°C

PD

117

0.67

Watts

W/°C

Storage Temperature RangeTstg–65 to +200°C
Operating Junction TemperatureTJ200°C

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